Observation of Dislocation Conversion in 4H-SiC Epitaxial Wafer by Mirror Projection Electron Microscopy

Toshiyuki Isshiki; Takahiro Sato; Masaki Hasegawa; Kentaro Ohira; Kenji Kobayashi; Atsushi Miyaki; Katsunori Onuki

doi:10.4028/www.scientific.net/MSF.963.251

Paper Titles

SiO₂/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance Measurements
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A Temperature Independent Effect of Near-Interface Traps in 4H-SiC MOS Capacitors
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Identification of Near-Interface Trap Distribution by Parameter Estimation
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Impact of Pit Defects on the Initial Electrical Characteristics of Planar-MOSFET Devices
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Observation of Dislocation Conversion in 4H-SiC Epitaxial Wafer by Mirror Projection Electron Microscopy
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Monitoring of Substrate and Epilayer Surfaces by Mirror Projection Electron Microscope
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Optical Discrimination of TSDs and TEDs in 4H-SiC Substrates and Epitaxial Layers by Phase Contrast Microscopy Method
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Dynamics Analysis of Single Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diode Based on Free Energy
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Analysis of Basal Plane Dislocation Dynamics in 4H-SiC Crystals during High Temperature Treatment
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HomeMaterials Science ForumMaterials Science Forum Vol. 963Observation of Dislocation Conversion in 4H-SiC...

Observation of Dislocation Conversion in 4H-SiC Epitaxial Wafer by Mirror Projection Electron Microscopy

Abstract:

Dislocations and stacking faults in 4H-SiC (0001) _si epitaxial wafer was inspected by mirror projection electron microscopy (MPJ) with the aid of low-energy SEM and FIB-STEM. MPJ observation found dislocation conversion near the wafer surface, and the conversion was confirmed by micro etch pit and low energy SEM method. Another conversion occurred in the epitaxial layer on array of TED half loops, which were detected by MPJ, was also observed by cross-sectional STEM.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

251-254

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.251

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Online since:

July 2019

Authors:

Toshiyuki Isshiki*, Takahiro Sato, Masaki Hasegawa, Kentaro Ohira, Kenji Kobayashi, Atsushi Miyaki, Katsunori Onuki

Keywords:

Dislocation Array, Dislocation Conversion, Mirror Projection Electron Microscopy, Stacking Fault, STEM

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