Optical Discrimination of TSDs and TEDs in 4H-SiC Substrates and Epitaxial Layers by Phase Contrast Microscopy Method

Ryo Hattori; Osamu Oku; Ryuichi Sugie; Kazutsugu Murakami; Masaaki Kuzuhara

doi:10.4028/www.scientific.net/MSF.963.259

Paper Titles

Identification of Near-Interface Trap Distribution by Parameter Estimation
p.240

Impact of Pit Defects on the Initial Electrical Characteristics of Planar-MOSFET Devices
p.244

Observation of Dislocation Conversion in 4H-SiC Epitaxial Wafer by Mirror Projection Electron Microscopy
p.251

Monitoring of Substrate and Epilayer Surfaces by Mirror Projection Electron Microscope
p.255

Optical Discrimination of TSDs and TEDs in 4H-SiC Substrates and Epitaxial Layers by Phase Contrast Microscopy Method
p.259

Dynamics Analysis of Single Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diode Based on Free Energy
p.263

Analysis of Basal Plane Dislocation Dynamics in 4H-SiC Crystals during High Temperature Treatment
p.268

Detecting Basal Plane Dislocations Converted in Highly Doped Epilayers
p.272

Dislocations Propagation Study Trough High-Resolution 4H-SiC Substrate Mapping
p.276

HomeMaterials Science ForumMaterials Science Forum Vol. 963Optical Discrimination of TSDs and TEDs in 4H-SiC...

Optical Discrimination of TSDs and TEDs in 4H-SiC Substrates and Epitaxial Layers by Phase Contrast Microscopy Method

Abstract:

Phase contrast microscopy (PCM) technique was demonstrated as the effective non-destructive discrimination method of TSDs and TEDs in 4H-SiC epitaxial layers in comparison with conventional polarized light microscopy, PL topography, KOH etch pit inspection and X-ray topography. The appearance of TSDs and TEDs by the PCM method is subtly modified by not only the consisting burgers vector but also the crystalline quality of the epitaxial layer or the substrate as the background. To extract more detailed information on the dislocations, the PCM inspection requires further investigation.