Deep Electronic Levels in n-Type and p-Type 3C-SiC

Abstract:

In recent times, 3C-SiC is gaining more and more interest in terms of applications for optoelectronics and quantum computing. Cubic SiC exhibits a number of luminescent defects in the near infrared originating from deep electronic levels. Temperature dependent photoluminescence measurements were conducted on n-type and p-type 3C-SiC in order to investigate the formation of dopant related point defects as well as intrinsic point defects and defect complexes. The results indicate a number of V_Si, V_C and V_CC_Si related defects which might be suitable candidates for future optoelectronic applications.

• Periodical: Materials Science Forum (Volume 963)
• Pages: 297-300
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.963.297
• Online since: July 2019
• Authors: Michael Schöler*, Maximilian W. Lederer, Peter J. Wellmann
• Keywords: 3C-SiC, Carbon Vacancy, Defects, Doping, p-Type, Sublimation Growth

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