Effects of Aluminum Incorporation on the Young’s Modulus of 3C-SiC Epilayers

Jaweb Ben Messaoud; Jean François Michaud; Marcin Zielinski; Daniel Alquier

doi:10.4028/www.scientific.net/MSF.963.305

Paper Titles

Effect of Defects in Silicon Carbide Epitaxial Layers on Yield and Reliability
p.284

Evaluation of Effect of Mechanical Stress on Stacking Fault Expansion in 4H-SiC P-i-N Diode
p.288

Deep Electronic Levels in n-Type and p-Type 3C-SiC
p.297

Combined EPR and Photoluminescence Study of Electron and Proton Irradiated 3C-SiC
p.301

Effects of Aluminum Incorporation on the Young’s Modulus of 3C-SiC Epilayers
p.305

Electrically Active Levels Generated by Long Oxidation Times in 4H-SiC
p.309

Minority Carrier Lifetime Measurements on 4H-SiC Epiwafers by Time-Resolved Photoluminescence and Microwave Detected Photoconductivity
p.313

Carrier Transport Mechanisms in Ion Implanted and Highly-Doped p-Type 4H-SiC(Al)
p.318

Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers
p.324

HomeMaterials Science ForumMaterials Science Forum Vol. 963Effects of Aluminum Incorporation on the Young’s...

Effects of Aluminum Incorporation on the Young’s Modulus of 3C-SiC Epilayers

Abstract:

The silicon carbide cubic polytype (3C-SiC) is a material of choice to fabricate microelectromechanical systems. However, the mechanical properties of 3C-SiC-based devices are severely linked to the stress of the involved 3C-SiC material. Moreover, the stress level can hamper completing microsystems. As a consequence, in this study, we considered the influence of aluminum (Al) doping towards the mechanical properties of 3C-SiC epilayers and demonstrated a noticeable reduction of the Young’s modulus with a high Al incorporation.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

305-308

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.305

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Online since:

July 2019

Authors:

Jaweb Ben Messaoud*, Jean François Michaud, Marcin Zielinski, Daniel Alquier

Keywords:

3C-SiC, Aluminum, Epilayers, p-Type Doping, Young’s Modulus

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