Electrically Active Levels Generated by Long Oxidation Times in 4H-SiC

Lars Knoll; Lukas Kranz; Giovanni Alfieri

doi:10.4028/www.scientific.net/MSF.963.309

Paper Titles

Evaluation of Effect of Mechanical Stress on Stacking Fault Expansion in 4H-SiC P-i-N Diode
p.288

Deep Electronic Levels in n-Type and p-Type 3C-SiC
p.297

Combined EPR and Photoluminescence Study of Electron and Proton Irradiated 3C-SiC
p.301

Effects of Aluminum Incorporation on the Young’s Modulus of 3C-SiC Epilayers
p.305

Electrically Active Levels Generated by Long Oxidation Times in 4H-SiC
p.309

Minority Carrier Lifetime Measurements on 4H-SiC Epiwafers by Time-Resolved Photoluminescence and Microwave Detected Photoconductivity
p.313

Carrier Transport Mechanisms in Ion Implanted and Highly-Doped p-Type 4H-SiC(Al)
p.318

Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers
p.324

4H-SiC p-Type Doping Determination from Secondary Electrons Imaging
p.328

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Electrically Active Levels Generated by Long Oxidation Times in 4H-SiC

Abstract:

We electrically characterized 4H-SiC n-type epilayers, oxidized in dry ambient in the 1200<T<1300 °C temperature range, for 75-600 min. Consistently with the literature, our results show the reduction of the concentration of the carbon vacancy concentration and of the D-center. Oxidation times equal or longer than 75 min, lead to the formation of two new electrically active levels in the upper part of the band gap and to four new electrically active levels in the lower part.