4H-SiC p-Type Doping Determination from Secondary Electrons Imaging

Maria Kayambaki; Nikolaos Makris; Katerina Tsagaraki; Hervé Peyré; Antonis Stavrinidis; George  Konstantinidis; Konstantinos Zekentes

doi:10.4028/www.scientific.net/MSF.963.328

Paper Titles

Electrically Active Levels Generated by Long Oxidation Times in 4H-SiC
p.309

Minority Carrier Lifetime Measurements on 4H-SiC Epiwafers by Time-Resolved Photoluminescence and Microwave Detected Photoconductivity
p.313

Carrier Transport Mechanisms in Ion Implanted and Highly-Doped p-Type 4H-SiC(Al)
p.318

Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers
p.324

4H-SiC p-Type Doping Determination from Secondary Electrons Imaging
p.328

Ultra-Fast and High-Precision Crystal Orientation Measurements on 4H-SiС
p.332

Study of Nitrogen Doping Effect on Lattice Strain Variation in 4H-SiC Substrates by Synchrotron X-Ray Contour Mapping Method
p.336

Newly Resolved Phonon-Assisted Transitions and Fine Structure in the Low Temperature Wavelength Modulated Absorption and Photoluminescence Spectra of 6H SiC
p.341

High Resolution Investigation of Stacking Fault Density by HRXRD and STEM
p.346

HomeMaterials Science ForumMaterials Science Forum Vol. 9634H-SiC p-Type Doping Determination from Secondary...

4H-SiC p-Type Doping Determination from Secondary Electrons Imaging

Abstract:

Secondary electron imaging of SiC epi-structures is commonly used as it allows doping topography i.e. the knowledge of the spatial extension of differently doped layers. Determination of the doping level of the layers was not possible until now. The present work presents how to use this technique for 4H-SiC p-type doping determination. This is indeed, possible for specific experimental data analysis and for doping levels higher than 10¹⁷cm^-3.

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Materials Science Forum (Volume 963)

Pages:

328-331

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.328

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Online since:

July 2019

Authors:

Maria Kayambaki, Nikolaos Makris, Katerina Tsagaraki, Hervé Peyré, Antonis Stavrinidis, George Konstantinidis, Konstantinos Zekentes*

Keywords:

Doping Profile, p-Type, SEPC, Silicon Carbide, SIMS

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