Newly Resolved Phonon-Assisted Transitions and Fine Structure in the Low Temperature Wavelength Modulated Absorption and Photoluminescence Spectra of 6H SiC

Walter M. Klahold; Wolfgang J. Choyke; Robert P. Devaty

doi:10.4028/www.scientific.net/MSF.963.341

Paper Titles

Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers
p.324

4H-SiC p-Type Doping Determination from Secondary Electrons Imaging
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Ultra-Fast and High-Precision Crystal Orientation Measurements on 4H-SiС
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Study of Nitrogen Doping Effect on Lattice Strain Variation in 4H-SiC Substrates by Synchrotron X-Ray Contour Mapping Method
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Newly Resolved Phonon-Assisted Transitions and Fine Structure in the Low Temperature Wavelength Modulated Absorption and Photoluminescence Spectra of 6H SiC
p.341

High Resolution Investigation of Stacking Fault Density by HRXRD and STEM
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Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates
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Nano and Micro-Scale Simulations of Si/4H-SiC and Si/3C-SiC NN-Heterojunction Diodes
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Characterization of β-Silicon Carbide and Potential Use as Irradiation Temperature Monitor
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HomeMaterials Science ForumMaterials Science Forum Vol. 963Newly Resolved Phonon-Assisted Transitions and...

Newly Resolved Phonon-Assisted Transitions and Fine Structure in the Low Temperature Wavelength Modulated Absorption and Photoluminescence Spectra of 6H SiC

Abstract:

We measured the low temperature wavelength modulated absorption and low temperature photoluminescence spectra of relatively high purity (n~10¹⁴-10¹⁵ cm^-3) 6H SiC boule and epi layers at high wavelength resolution (0.1-0.7 Å) to adequately separate and identify phonon-assisted absorption and recombination processes due to free excitons. As a result we have identified newly resolved or weak features in both spectra which we associate with previously unidentified momentum conserving (MC) phonons. We obtain the energies of 21 of the 36 possible MC phonons in 6H SiC and a more accurate estimate of the exciton bandgap, E_gx = 3.0225±0.0003 eV. In several of the phonon-assisted absorption onsets we also observe fine structure and variations in the measured spin-orbit splitting, which relate to a fourfold splitting of the free exciton energy bands.

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Materials Science Forum (Volume 963)

Pages:

341-345

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.341

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Online since:

July 2019

Authors:

Walter M. Klahold, Wolfgang J. Choyke, Robert P. Devaty*

Keywords:

Band Structure, Free Exciton, Low Temperature Photoluminescence, Phonons, Spin-Orbit Splitting, Wavelength Modulated Absorption

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