Ultra-Fast and High-Precision Crystal Orientation Measurements on 4H-SiС

Nadine Schüler; Torsten Weißbach; Hans Arthur Bradaczek; Hans Berger; Kay Dornich

doi:10.4028/www.scientific.net/MSF.963.332

Paper Titles

Minority Carrier Lifetime Measurements on 4H-SiC Epiwafers by Time-Resolved Photoluminescence and Microwave Detected Photoconductivity
p.313

Carrier Transport Mechanisms in Ion Implanted and Highly-Doped p-Type 4H-SiC(Al)
p.318

Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers
p.324

4H-SiC p-Type Doping Determination from Secondary Electrons Imaging
p.328

Ultra-Fast and High-Precision Crystal Orientation Measurements on 4H-SiС
p.332

Study of Nitrogen Doping Effect on Lattice Strain Variation in 4H-SiC Substrates by Synchrotron X-Ray Contour Mapping Method
p.336

Newly Resolved Phonon-Assisted Transitions and Fine Structure in the Low Temperature Wavelength Modulated Absorption and Photoluminescence Spectra of 6H SiC
p.341

High Resolution Investigation of Stacking Fault Density by HRXRD and STEM
p.346

Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates
p.353

HomeMaterials Science ForumMaterials Science Forum Vol. 963Ultra-Fast and High-Precision Crystal Orientation...

Ultra-Fast and High-Precision Crystal Orientation Measurements on 4H-SiС

Abstract:

For a fast and precise crystal orientation of 4H-SiC, the so-called Omega-scan is presented. With this method the orientation can be determined within only 5 s. This paper presents a detailed study of different influences on the precision and repeatability of this method on 4H-SiC.