Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers

Hideharu Matsuura; Rinya Nishihata; Akinobu Takeshita; Tatsuya Imamura; Kota Takano; Kazuya Okuda; Atsuki Hidaka; Shi Yang Ji; Kazuma Eto; Kazutoshi Kojima; Tomohisa Kato; Sadafumi Yoshida; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.963.324

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HomeMaterials Science ForumMaterials Science Forum Vol. 963Relationship between Temperature Dependencies of...

Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers

Abstract:

The temperature dependencies of the resistivity and Hall coefficient for heavily Al-doped 4H-SiC epilayers with Al concentration (C_Al) higher than 2×10¹⁹ cm^-3 were investigated. The signs of measured Hall coefficients (R_H) change from positive to negative at low temperatures. For the epilayers with C_Al < 3×10¹⁹ cm^-3 the sign inversion occurred in the hopping conduction region, which was reported to be explicable using the model for amorphous semiconductors. For the epilayers with C_Al > 3×10¹⁹ cm^-3, on the other hand, the sign inversion occurred in the band conduction region, which is a striking feature, because the movement of free holes in the valence band should make R_H positive. The sign-inversion temperature increased with increasing C_Al, while the dominant-conduction-mechanism-change temperature was almost independent of C_Al.

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Materials Science Forum (Volume 963)

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324-327

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https://doi.org/10.4028/www.scientific.net/MSF.963.324

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Online since:

July 2019

Authors:

Hideharu Matsuura*, Rinya Nishihata, Akinobu Takeshita, Tatsuya Imamura, Kota Takano, Kazuya Okuda, Atsuki Hidaka, Shi Yang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura

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Conduction Mechanism, Hall Coefficient, Heavily Al-Doped 4H-SiC, Resistivity, Sign Inversion of Hall Coefficient

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