Development of a High-Speed Switching Silicon Carbide Power Module

Abstract:

We developed a silicon carbide (SiC) power module that can switch large currents at high speed. The withstand voltage of this power module is 1200 V, and two SiC MOSFETs are built-in and constitute a circuit for one inverter phase. This power module incorporates a snubber circuit for reducing the surge voltage generated by the SiC MOSFET for high-speed switching. In this study, switching at 270 A (a current density of 1000 A/cm 2 or more for the SiC MOSFET) was performed to evaluate this module. The turn-off switching time tf was ~10 ns, and the maximum dv/dt was 80 kV/us. Furthermore, this research examines the design and performance of the proposed power module.

• Periodical: Materials Science Forum (Volume 963)
• Pages: 864-868
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.963.864
• Online since: July 2019
• Authors: Shinji Sato*, Fumiki Kato, Hidekazu Tanisawa, Kenichi Koui, Kinuyo Watanabe, Yoshinori Murakami, Yusuke Kobayashi, Hiroshi Sato, Hiroshi Yamaguchi, Shinsuke Harada
• Keywords: High Current Density, Power Module, Silicon Carbide IE-UMOSFET, Switching Test

References

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DOI: 10.1149/08612.0083ecst

[2] http://www.allied-material.co.jp/dcms_media/other/t52nn.pdf [Accessed 26th Dec. 2017].

[3] S. Harada et al., 1200 V SiC IE-UMOSFET with Low On-Resistance and High Threshold Voltage,, Materials Science Forum, Vol. 897, pp.497-500 (2017).

DOI: 10.4028/www.scientific.net/msf.897.497

[4] https://www.tia-nano.jp/tpec/index.html [Accessed 26th Dec. 2017].

[5] F. Kato et al., Identification of thermo-mechanical fatigue fracture location by transient thermal analysis for high-temperature operating SiC power module assembled with ZnAl eutectic solder,, High Temperature Electronics Network (HiTEN) (2017).

DOI: 10.4071/2380-4491-2018-hiten-000028