SiC Power Devices for Applications in Hybrid and Electric Vehicles

Nima Zabihi; Asim Mumtaz; Tom Logan; Thilini Daranagama; Richard A. McMahon

doi:10.4028/www.scientific.net/MSF.963.869

Paper Titles

4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters
p.837

SiC Vertical-Channel n- and p-JFETs Fully Fabricated by Ion Implantation
p.841

Improved Offset Voltage Stability of 4H-SiC CMOS Operational Amplifier by Increasing Gamma Irradiation Resistance
p.845

Comparative Study of Developed 1200V/50A Full SiC IEMOS and VMOS Power Module
p.851

An Efficient Simulation Methodology to Quantify the Impact of Parameter Fluctuations on the Electrothermal Behavior of Multichip SiC Power Modules
p.855

6.5 kV Si/SiC Hybrid Power Module Technology
p.859

Development of a High-Speed Switching Silicon Carbide Power Module
p.864

SiC Power Devices for Applications in Hybrid and Electric Vehicles
p.869

Power Loss Comparison in a BOOST PFC Circuit Considering the Reverse Recovery of the Forward Diode
p.873

HomeMaterials Science ForumMaterials Science Forum Vol. 963SiC Power Devices for Applications in Hybrid and...

SiC Power Devices for Applications in Hybrid and Electric Vehicles

Abstract:

Power electronic inverters and converters are an essential technology in the battery management and propulsion for Hybrid and Electric vehicles (HEVs). In order to improve competitiveness of HEVs there is a drive to improve the conversion efficiency of the power electronics. Using Silicon Carbide (SiC) power devices has been identified as a key enabler of future improvements in performance but it is essential to understand how these devices perform in an automotive context. Two similar half bridge circuits has been built using SiC MOSFETs, one with and the other without anti-parallel Schottky SiC diode. In this paper the power loss and efficiency of half-bridge has been compared as the dead-time is changed. Effect of changing dead-time on the converter are shown. The paper gives insight into these phenomena with additional experimental data supported by simulation. The implications for using SiC devices in both DC to DC and DC to AC converters are discussed.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

869-872

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.869

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Online since:

July 2019

Authors:

Nima Zabihi*, Asim Mumtaz, Tom Logan, Thilini Daranagama, Richard A. McMahon

Keywords:

Dead-Time, HEV, MOSFETs, SiC Devices

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* - Corresponding Author

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