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HomeSolid State PhenomenaSolid State Phenomena Vols. 1-2Defects and Doping Effects in CdTe and CulnS2 by...

Defects and Doping Effects in CdTe and CulnS₂ by Phosphorus Ion Implantation and Pulsed Electron Beam Annealing

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Ion Implantation in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 1-2)

Pages:

343-359

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.1-2.343

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Online since:

January 1988

Authors:

H.Y. Ueng, H.L. Hwang

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© 1988 Trans Tech Publications Ltd. All Rights Reserved

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