Defects and Doping Effects in CdTe and CulnS2 by Phosphorus Ion Implantation and Pulsed Electron Beam Annealing

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Periodical:

Solid State Phenomena (Volumes 1-2)

Edited by:

D. Stievenard and J.C. Bourgoin

Pages:

343-359

DOI:

10.4028/www.scientific.net/SSP.1-2.343

Citation:

H.Y. Ueng and H.L. Hwang, "Defects and Doping Effects in CdTe and CulnS2 by Phosphorus Ion Implantation and Pulsed Electron Beam Annealing", Solid State Phenomena, Vols. 1-2, pp. 343-359, 1988

Online since:

January 1991

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