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Rapid Isothermal Annealing of Ion Implanted Gallium-Arsenide
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HomeSolid State PhenomenaSolid State Phenomena Vols. 1-2A Review of Deep Levels in Donor-Ion Implanted...

A Review of Deep Levels in Donor-Ion Implanted GaAs

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Ion Implantation in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 1-2)

Pages:

211-245

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.1-2.211

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Online since:

January 1988

Authors:

D.W.E. Allsopp

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© 1988 Trans Tech Publications Ltd. All Rights Reserved

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