Paper Titles

Diffusion of Ion-Implanted Group III and V Impurities in SlO₂
p.133

Annealing of Implants Reduces Lattice Defects and 1/f Noise
p.153

Formation and Optimization of Shallow Junctions by Ion Implantation and Rapid Thermal Annealing for CMOS Application
p.159

Fabrication of Nanometer Doping Structures by Secondary Implantation
p.169

The Use of Ion Implantation for Lifetime Control in Silicon Devices
p.177

Silicon Surface and Interface Damage Studies Using Ion Implantation
p.187

Recoil Implantation for Shallow Junction Formation in Silicon
p.195

Defects in SIMOX Structures
p.203

A Review of Deep Levels in Donor-Ion Implanted GaAs
p.211

HomeSolid State PhenomenaSolid State Phenomena Vols. 1-2The Use of Ion Implantation for Lifetime Control...

The Use of Ion Implantation for Lifetime Control in Silicon Devices

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Ion Implantation in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 1-2)

Pages:

177-185

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.1-2.177

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Online since:

January 1988

Authors:

A. Mogro-Campero

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© 1988 Trans Tech Publications Ltd. All Rights Reserved

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