The Use of Ion Implantation for Lifetime Control in Silicon Devices

Abstract:

Article Preview

Info:

Periodical:

Solid State Phenomena (Volumes 1-2)

Edited by:

D. Stievenard and J.C. Bourgoin

Pages:

177-185

DOI:

10.4028/www.scientific.net/SSP.1-2.177

Citation:

A. Mogro-Campero "The Use of Ion Implantation for Lifetime Control in Silicon Devices", Solid State Phenomena, Vols. 1-2, pp. 177-185, 1988

Online since:

January 1991

Authors:

Export:

Price:

$35.00

In order to see related information, you need to Login.