Paper Titles

Dopant Anomalous Diffusion Induced in Silicon by Ion Implantation
p.65

Electrical Characterization of Buried Layers in Silicon
p.85

Mechanism of Buried Oxide Formation by Implanted Oxygen
p.115

Diffusion of Ion-Implanted Group III and V Impurities in SlO₂
p.133

Annealing of Implants Reduces Lattice Defects and 1/f Noise
p.153

Formation and Optimization of Shallow Junctions by Ion Implantation and Rapid Thermal Annealing for CMOS Application
p.159

Fabrication of Nanometer Doping Structures by Secondary Implantation
p.169

The Use of Ion Implantation for Lifetime Control in Silicon Devices
p.177

Silicon Surface and Interface Damage Studies Using Ion Implantation
p.187

HomeSolid State PhenomenaSolid State Phenomena Vols. 1-2Annealing of Implants Reduces Lattice Defects and...

Annealing of Implants Reduces Lattice Defects and 1/f Noise

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Ion Implantation in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 1-2)

Pages:

153-158

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.1-2.153

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Online since:

January 1988

Authors:

L.K.J. Vandamme

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© 1988 Trans Tech Publications Ltd. All Rights Reserved

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