Formation and Optimization of Shallow Junctions by Ion Implantation and Rapid Thermal Annealing for CMOS Application

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Periodical:

Solid State Phenomena (Volumes 1-2)

Edited by:

D. Stievenard and J.C. Bourgoin

Pages:

159-168

DOI:

10.4028/www.scientific.net/SSP.1-2.159

Citation:

I. W. Wu "Formation and Optimization of Shallow Junctions by Ion Implantation and Rapid Thermal Annealing for CMOS Application", Solid State Phenomena, Vols. 1-2, pp. 159-168, 1988

Online since:

January 1991

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$35.00

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