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HomeSolid State PhenomenaSolid State Phenomena Vols. 1-2Mechanism of Buried Oxide Formation by Implanted...

Mechanism of Buried Oxide Formation by Implanted Oxygen

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Ion Implantation in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 1-2)

Pages:

115-131

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.1-2.115

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Online since:

January 1988

Authors:

J. Stoemenos

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© 1988 Trans Tech Publications Ltd. All Rights Reserved

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