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Paper Titles
EBIC-Investigation of the Dislocation-Impurity Interaction in Silicon
p.59
Dopant Anomalous Diffusion Induced in Silicon by Ion Implantation
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Electrical Characterization of Buried Layers in Silicon
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Diffusion of Ion-Implanted Group III and V Impurities in SlO2
p.133
Annealing of Implants Reduces Lattice Defects and 1/f Noise
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Formation and Optimization of Shallow Junctions by Ion Implantation and Rapid Thermal Annealing for CMOS Application
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Fabrication of Nanometer Doping Structures by Secondary Implantation
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The Use of Ion Implantation for Lifetime Control in Silicon Devices
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HomeSolid State PhenomenaSolid State Phenomena Vols. 1-2Diffusion of Ion-Implanted Group III and V...

Diffusion of Ion-Implanted Group III and V Impurities in SlO2

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Periodical:

Solid State Phenomena (Volumes 1-2)

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133-152

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.1-2.133

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Online since:

January 1988

Authors:

A.H. Van Ommen

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© 1988 Trans Tech Publications Ltd. All Rights Reserved

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