Paper Titles

Modeling of Oxygen Depth Profiles in High Dose Oxygen-Implanted Silicon
p.11

Channeling, RBS and Mössbauer Measurements on ¹⁵¹Eu Implanted Si
p.33

Cross-Sectional Transmission Electron Microscope Study of Bf₂+-Implanted (001) and (111) Silicon
p.45

EBIC-Investigation of the Dislocation-Impurity Interaction in Silicon
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Dopant Anomalous Diffusion Induced in Silicon by Ion Implantation
p.65

Electrical Characterization of Buried Layers in Silicon
p.85

Mechanism of Buried Oxide Formation by Implanted Oxygen
p.115

Diffusion of Ion-Implanted Group III and V Impurities in SlO₂
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Annealing of Implants Reduces Lattice Defects and 1/f Noise
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HomeSolid State PhenomenaSolid State Phenomena Vols. 1-2Dopant Anomalous Diffusion Induced in Silicon by...

Dopant Anomalous Diffusion Induced in Silicon by Ion Implantation

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Ion Implantation in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 1-2)

Pages:

65-83

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.1-2.65

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Online since:

January 1988

Authors:

Sandro Solmi, Marco Servidori

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© 1988 Trans Tech Publications Ltd. All Rights Reserved

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