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Characterization of Ion-Implanted Heavily-Doped Silicon by Optical Reflection
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Channeling, RBS and Mössbauer Measurements on ¹⁵¹Eu Implanted Si
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Cross-Sectional Transmission Electron Microscope Study of Bf₂+-Implanted (001) and (111) Silicon
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EBIC-Investigation of the Dislocation-Impurity Interaction in Silicon
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Dopant Anomalous Diffusion Induced in Silicon by Ion Implantation
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Electrical Characterization of Buried Layers in Silicon
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Mechanism of Buried Oxide Formation by Implanted Oxygen
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HomeSolid State PhenomenaSolid State Phenomena Vols. 1-2Channeling, RBS and Mössbauer Measurements on...

Channeling, RBS and Mössbauer Measurements on ¹⁵¹Eu Implanted Si

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Ion Implantation in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 1-2)

Pages:

33-43

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.1-2.33

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Online since:

January 1988

Authors:

A. Bhagawat, M.B. Kurup, K.G. Prasad, R.P. Sharma

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© 1988 Trans Tech Publications Ltd. All Rights Reserved

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