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Paper Titles
Preface
Characterization of Ion-Implanted Heavily-Doped Silicon by Optical Reflection
p.1
Modeling of Oxygen Depth Profiles in High Dose Oxygen-Implanted Silicon
p.11
Channeling, RBS and Mössbauer Measurements on 151Eu Implanted Si
p.33
Cross-Sectional Transmission Electron Microscope Study of Bf2+-Implanted (001) and (111) Silicon
p.45
EBIC-Investigation of the Dislocation-Impurity Interaction in Silicon
p.59
Dopant Anomalous Diffusion Induced in Silicon by Ion Implantation
p.65
Electrical Characterization of Buried Layers in Silicon
p.85
Mechanism of Buried Oxide Formation by Implanted Oxygen
p.115

Preface

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Solid State Phenomena (Volumes 1-2)

Online since:

January 1988

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© 1988 Trans Tech Publications Ltd. All Rights Reserved

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