Paper Titles

Characterization of Ion-Implanted Heavily-Doped Silicon by Optical Reflection
p.1

Modeling of Oxygen Depth Profiles in High Dose Oxygen-Implanted Silicon
p.11

Channeling, RBS and Mössbauer Measurements on ¹⁵¹Eu Implanted Si
p.33

Cross-Sectional Transmission Electron Microscope Study of Bf₂+-Implanted (001) and (111) Silicon
p.45

EBIC-Investigation of the Dislocation-Impurity Interaction in Silicon
p.59

Dopant Anomalous Diffusion Induced in Silicon by Ion Implantation
p.65

Electrical Characterization of Buried Layers in Silicon
p.85

Mechanism of Buried Oxide Formation by Implanted Oxygen
p.115

Diffusion of Ion-Implanted Group III and V Impurities in SlO₂
p.133

HomeSolid State PhenomenaSolid State Phenomena Vols. 1-2EBIC-Investigation of the Dislocation-Impurity...

EBIC-Investigation of the Dislocation-Impurity Interaction in Silicon

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Ion Implantation in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 1-2)

Pages:

59-63

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.1-2.59

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Online since:

January 1988

Authors:

I.E. Bondarenko, Eugene B. Yakimov

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© 1988 Trans Tech Publications Ltd. All Rights Reserved

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