Formation and Optimization of Shallow Junctions by Ion Implantation and Rapid Thermal Annealing for CMOS Application
p.159
p.159
Fabrication of Nanometer Doping Structures by Secondary Implantation
p.169
p.169
The Use of Ion Implantation for Lifetime Control in Silicon Devices
p.177
p.177
Silicon Surface and Interface Damage Studies Using Ion Implantation
p.187
p.187
Recoil Implantation for Shallow Junction Formation in Silicon
p.195
p.195
Defects in SIMOX Structures
p.203
p.203
A Review of Deep Levels in Donor-Ion Implanted GaAs
p.211
p.211
Ion Implantation in GaAs
p.247
p.247
Rapid Isothermal Annealing of Ion Implanted Gallium-Arsenide
p.281
p.281
Recoil Implantation for Shallow Junction Formation in Silicon
Abstract:
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Periodical:
Solid State Phenomena (Volumes 1-2)
Pages:
195-201
Citation:
Online since:
January 1988
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Сopyright:
© 1988 Trans Tech Publications Ltd. All Rights Reserved
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