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HomeSolid State PhenomenaSolid State Phenomena Vols. 1-2Structure of Radiation Damage in Germanium Induced...

Structure of Radiation Damage in Germanium Induced by Te+-Implantation Near Channeling Conditions

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Ion Implantation in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 1-2)

Pages:

465-473

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.1-2.465

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Online since:

January 1988

Authors:

M.G. Kalitzova, D.S. Karpuzov, N.K. Pashov

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© 1988 Trans Tech Publications Ltd. All Rights Reserved

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