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A Theoretical Study of Dislocation Formation at Surfaces in Covalent Materials: Effect of Step Geometry and Reactivity
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HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Peculiarities of the Initial Stage of Oxygen...

Peculiarities of the Initial Stage of Oxygen Precipitation in Irradiated Silicon

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Gettering and Defect Engineering in Semiconductor Technology XI

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

199-204

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.199

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Online since:

December 2005

Authors:

A.A. Groza, M.I. Starchik, P.G. Litovchenko, A.P. Litovchenko, D. Bisello, R. Rando, P. Giubilato, A. Candelori, V. Khomenkov

Keywords:

IR Absorption, Irradiation, Oxygen Precipitation, Silicon

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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