Peculiarities of the Initial Stage of Oxygen Precipitation in Irradiated Silicon

Abstract:

Article Preview

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

199-204

DOI:

10.4028/www.scientific.net/SSP.108-109.199

Citation:

A.A. Groza et al., "Peculiarities of the Initial Stage of Oxygen Precipitation in Irradiated Silicon", Solid State Phenomena, Vols. 108-109, pp. 199-204, 2005

Online since:

December 2005

Export:

Price:

$35.00

In order to see related information, you need to Login.