"New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress
Effects of compressive stress on oxygen agglomeration processes in Czochralski grown silicon heat treated at T= 450OC, used as a reference temperature, and T= 600OC to 800OC are investigated in some detail. Compressive stresses of about P= 1 GPa lead to enhanced formation of Thermal Double Donors in materials annealed over a temperature range of T= 450OC – 600OC. It has been shown that the formation of thermal donors at T= 450OC under normal conditions and compressive stress is accompanied with loss of substitutional boron. In contrast, the concentration of the shallow acceptor states of substitutional boron in silicon annealed under stress at T≥ 600OC remains constant. An enhancement effect of thermal donor formation is gradually weakened at T≥ 700OC. The oxygen diffusivity sensitive to mechanical stress is believed to be responsible for the observed effects in heat-treated silicon.
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
V. V. Emtsev et al., ""New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress", Solid State Phenomena, Vols. 108-109, pp. 181-186, 2005