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Paper Titles
The Influence of Nitrogen on Dislocation Locking in Float-Zone Silicon
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Amorphisation and Recrystallisation of Nanometre Sized Zones in Silicon
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Ab Initio Studies of Local Vibrations of Small Self-Interstitials Aggregates in Silicon
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Influence of Magnetic Field on the Unlocking Stress for Dislocation Motion in Cz-Si Depending on Pre-Annealing Time

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Abstract:

We investigated the effect of magnetic field on the unlocking stress for dislocations in Cz-Si, measured at 600oC, depending on the thermal prehistory of samples. The effect increases with increasing of the duration of sample annealing at 600oC before the magnetic field treatment. The experimental data are consistent with the assumption that the magnetic field stimulate some changes in configuration of oxygen accumulated at dislocations before the magnetic field treatment, but not the state of oxygen in a bulk.

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

163-168

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.163

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Online since:

December 2005

Authors:

M. Badylevich, Vitaly V. Kveder, Valeri I. Orlov, Yu. Osipyan

Keywords:

Dislocation, Magnetic Field, Oxygen, Silicon, Spin-Dependent Reactions, Unlocking Stress

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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