Influence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-Si
Oxygen precipitation and creation of defects in Czochralski grown silicon with interstitial oxygen concentration 9.4·1017 cm-3, subjected to irradiation with neutrons (5 MeV, dose 1x1017 cm-2) and subsequently treated for 5 h under atmospheric and high hydrostatic pressures (HP, up to 1.1 GPa) at 1270 / 1400 K, were investigated by spectroscopic and X - Ray methods. Point defects created by neutron irradiation stimulate oxygen precipitation and creation of dislocations under HP, especially at 1270 K. The effect of pressure treatment is related to changed concentration and mobility of silicon interstitials and vacancies as well as of the VnOm – type defects.
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
J. Bak-Misiuk et al., "Influence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-Si", Solid State Phenomena, Vols. 108-109, pp. 169-174, 2005