Influence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-Si

Jadwiga Bak-Misiuk; Andrzej Misiuk; Barbara Surma; Artem Shalimov; Charalamos A. Londos

doi:10.4028/www.scientific.net/SSP.108-109.169

Paper Titles

Amorphisation and Recrystallisation of Nanometre Sized Zones in Silicon
p.145

Impact of Low Temperature Hydrogenation on Recombination Activity of Dislocations in Silicon
p.151

FTIR Study of Precipitation of Implanted Nitrogen in CZ-Si Annealed under High Hydrostatic Pressure
p.157

Influence of Magnetic Field on the Unlocking Stress for Dislocation Motion in Cz-Si Depending on Pre-Annealing Time
p.163

Influence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-Si
p.169

Ab Initio Studies of Local Vibrations of Small Self-Interstitials Aggregates in Silicon
p.175

"New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress
p.181

Formation of the Buried Insulating Si_xN_y Layer in the Region of Radiation Defects Created by Hydrogen Implantation in Silicon Wafer
p.187

A Theoretical Study of Dislocation Formation at Surfaces in Covalent Materials: Effect of Step Geometry and Reactivity
p.193

HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Influence of Neutron Irradiation on Stress -...

Influence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-Si

Abstract:

Oxygen precipitation and creation of defects in Czochralski grown silicon with interstitial oxygen concentration 9.4·1017 cm-3, subjected to irradiation with neutrons (5 MeV, dose 1x1017 cm-2) and subsequently treated for 5 h under atmospheric and high hydrostatic pressures (HP, up to 1.1 GPa) at 1270 / 1400 K, were investigated by spectroscopic and X - Ray methods. Point defects created by neutron irradiation stimulate oxygen precipitation and creation of dislocations under HP, especially at 1270 K. The effect of pressure treatment is related to changed concentration and mobility of silicon interstitials and vacancies as well as of the VnOm – type defects.

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

169-174

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.169

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Online since:

December 2005

Authors:

Jadwiga Bak-Misiuk, Andrzej Misiuk, Barbara Surma, Artem Shalimov, Charalamos A. Londos

Keywords:

Annealing, CZ-Si, Hydrostatic Pressure, Neutron Irradiation, Oxygen Precipitation, Stress

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