FTIR Study of Precipitation of Implanted Nitrogen in CZ-Si Annealed under High Hydrostatic Pressure

Abstract:

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The evolution of nitrogen related infrared vibrational spectra of CZ-Si implanted with nitrogen, with doses 1017 ion/cm2 and 1018 ion/cm2, at 140 keV, was studied after annealing at 1130°C/5h under different hydrostatic pressures, from 1 bar to 10.7 kbar. It was found for each pressure applied, that the increased nitrogen dose leads to transformation of broadband spectra to the fine structure ones, corresponding to crystalline silicon nitride. The spectral position of observed sharp peaks in the investigated pressure region is red shifted in comparison to the peaks of crystalline silicon oxynitride found recently by other investigators in nitrogen-containing poly-Si as well as in a residual melt of nitrogen-doped CZ-Si. The application of pressure during annealing results in further red shift of the nitrogen-related bands. The observed decrease of frequency of vibrational bands is explained in terms of the pressure induced lowered incorporation of oxygen into growing oxynitride phase.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

157-162

DOI:

10.4028/www.scientific.net/SSP.108-109.157

Citation:

V.D. Akhmetov et al., "FTIR Study of Precipitation of Implanted Nitrogen in CZ-Si Annealed under High Hydrostatic Pressure ", Solid State Phenomena, Vols. 108-109, pp. 157-162, 2005

Online since:

December 2005

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$35.00

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