Microscopic Mechanisms of Cobalt Disilicide Nucleation in Silicon

V.A. Borodin; M.O. Ruault; Mariya G. Ganchenkova; F. Fortuna

doi:10.4028/www.scientific.net/SSP.108-109.133

Paper Titles

Effect of Oxygen Precipitates on the Surface-Precipitation of Nickel on Cz-Silicon Wafers
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Electrical Properties of Clustered and Precipitated Iron in Silicon
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Gettering Mechanism of Cu in Silicon Calculated from First Principles
p.115

Energetics and Kinetics of Defects and Impurities in Silicon from Atomistic Calculations
p.125

Microscopic Mechanisms of Cobalt Disilicide Nucleation in Silicon
p.133

The Influence of Nitrogen on Dislocation Locking in Float-Zone Silicon
p.139

Amorphisation and Recrystallisation of Nanometre Sized Zones in Silicon
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Impact of Low Temperature Hydrogenation on Recombination Activity of Dislocations in Silicon
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FTIR Study of Precipitation of Implanted Nitrogen in CZ-Si Annealed under High Hydrostatic Pressure
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Microscopic Mechanisms of Cobalt Disilicide Nucleation in Silicon

Abstract:

The paper presents the results of experimental in-situ observations of cobalt disilicide nucleation in Co+ implanted silicon and ab initio simulations of energies of small cobalt and cobaltvacancy clusters. Based on these results, microscopic nucleation mechanisms of different types of CoSi2 precipitates are discussed.

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

133-138

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.133

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Online since:

December 2005

Authors:

V.A. Borodin, M.O. Ruault, Mariya G. Ganchenkova, F. Fortuna

Keywords:

Ab Initio Simulation, Cobalt Disilicide, Precipitation, Silicon, TEM

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References

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