Microscopic Mechanisms of Cobalt Disilicide Nucleation in Silicon

Abstract:

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The paper presents the results of experimental in-situ observations of cobalt disilicide nucleation in Co+ implanted silicon and ab initio simulations of energies of small cobalt and cobaltvacancy clusters. Based on these results, microscopic nucleation mechanisms of different types of CoSi2 precipitates are discussed.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

133-138

DOI:

10.4028/www.scientific.net/SSP.108-109.133

Citation:

V.A. Borodin et al., "Microscopic Mechanisms of Cobalt Disilicide Nucleation in Silicon", Solid State Phenomena, Vols. 108-109, pp. 133-138, 2005

Online since:

December 2005

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Price:

$35.00

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