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HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Electrical Properties of Clustered and...

Electrical Properties of Clustered and Precipitated Iron in Silicon

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Abstract:

Deep electronic states associated with iron silicide precipitates have been studied by means of deep-level transient spectroscopy. The observed spectra show the characteristic features of bandlike states at extended defects. From the stability of the states on annealing at moderate temperature they are tentatively attributed to precipitate-matrix interfaces.

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Gettering and Defect Engineering in Semiconductor Technology XI

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Solid State Phenomena (Volumes 108-109)

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109-114

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https://doi.org/10.4028/www.scientific.net/SSP.108-109.109

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Online since:

December 2005

Authors:

R. Khalil, Vitaly V. Kveder, Wolfgang Schröter, Michael Seibt

Keywords:

DLTS, Extended Defects, Iron, Silicide Precipitates, Silicon

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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