Electrical Properties of Clustered and Precipitated Iron in Silicon

Abstract:

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Deep electronic states associated with iron silicide precipitates have been studied by means of deep-level transient spectroscopy. The observed spectra show the characteristic features of bandlike states at extended defects. From the stability of the states on annealing at moderate temperature they are tentatively attributed to precipitate-matrix interfaces.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

109-114

DOI:

10.4028/www.scientific.net/SSP.108-109.109

Citation:

R. Khalil et al., "Electrical Properties of Clustered and Precipitated Iron in Silicon", Solid State Phenomena, Vols. 108-109, pp. 109-114, 2005

Online since:

December 2005

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Price:

$35.00

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