Morphological Transformation of Oxide Particles and Thresholds for Effective Gettering in Silicon

Robert J. Falster; Vladimir V. Voronkov; V.Y. Resnick; M.G. Mil'vidskii

doi:10.4028/www.scientific.net/SSP.108-109.97

Paper Titles

Evolution of Quantum Electronic Features with the Size of Silicon Nanoparticles Embedded in a SiO₂ Layer Obtained by Low Energy Ion Implantation
p.71

Carrier Accumulation in Silicon-On-Insulator Structures Containing Ge Nanocrystals in the Burried SiO₂ Layer
p.77

Ge Nanoclusters in GeO₂: Synthesis and Optical Properties
p.83

µ-Raman Investigations on Hydrogen Gettering in Hydrogen Implanted and Hydrogen Plasma Treated Czochralski Silicon
p.91

Morphological Transformation of Oxide Particles and Thresholds for Effective Gettering in Silicon
p.97

Effect of Oxygen Precipitates on the Surface-Precipitation of Nickel on Cz-Silicon Wafers
p.103

Electrical Properties of Clustered and Precipitated Iron in Silicon
p.109

Gettering Mechanism of Cu in Silicon Calculated from First Principles
p.115

Energetics and Kinetics of Defects and Impurities in Silicon from Atomistic Calculations
p.125

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Morphological Transformation of Oxide Particles and Thresholds for Effective Gettering in Silicon

Abstract:

This paper presents a qualitative description and quantitative model of the technologically important problem of the transition from ineffective to effective internal gettering (IG) states in CZ silicon wafers as the precipitation of oxygen proceeds at high temperatures. Of central importance to the problem is a morphological transformation of growing oxide preciptitates from an initial strain free to a strained platelet state. The transition to effective IG occurs when approximately 107 cm-3 precipitate sites are transformed into the strained state. The transformation rates as a function of oxygen concentration and precipitate site density, deduced from etching and TEM, are presented. A model for the morphological transformation to the strained state is developed and with it a model for the annealing criteria for the threshold for effective gettering.

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

97-102

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.97

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Online since:

December 2005

Authors:

Robert J. Falster, Vladimir V. Voronkov, V.Y. Resnick, M.G. Mil'vidskii

Keywords:

Gettering, Oxygen Precipitation, Silicon

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