Carrier Accumulation in Silicon-On-Insulator Structures Containing Ge Nanocrystals in the Burried SiO2 Layer

Ida E. Tyschenko; A.A. Frantsuzov; O.V. Naumova; B.I. Fomin; D.V. Nikolaev; V.P. Popov

doi:10.4028/www.scientific.net/SSP.108-109.77

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HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Carrier Accumulation in Silicon-On-Insulator...

Carrier Accumulation in Silicon-On-Insulator Structures Containing Ge Nanocrystals in the Burried SiO₂ Layer

Abstract:

Electro-physical properties of metal-oxide-silicon (MOS) structures and MOS transistors, prepared in the top silicon layer of silicon-on-insulator (SOI) structures containing Ge nanocrystals in the buried SiO2 layers, have been studied. It was obtained that carrier accumulation in MOS structures depend on the direction of built-in electrical field in MOS structures. Accumulation of the excess negative charges in the case of p-channel transistors is associated with electron trapping on Ge nanocrystals synthesized in the buried dielectric. In the case of n-channel transistor, positive charge related to the Si/SiO2 interface or to the charged oxide is accumulated. The Ge atoms diffused to the SiO2/Si interface can stimulate the formation of the excess positive charge.

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

77-82

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.77

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Online since:

December 2005

Authors:

Ida E. Tyschenko, A.A. Frantsuzov, O.V. Naumova, B.I. Fomin, D.V. Nikolaev, V.P. Popov

Keywords:

Carrier Trapping, Germanium, Nanocrystal, Silicon-on-Insulator (SOI)

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