Carrier Accumulation in Silicon-On-Insulator Structures Containing Ge Nanocrystals in the Burried SiO2 Layer

Abstract:

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Electro-physical properties of metal-oxide-silicon (MOS) structures and MOS transistors, prepared in the top silicon layer of silicon-on-insulator (SOI) structures containing Ge nanocrystals in the buried SiO2 layers, have been studied. It was obtained that carrier accumulation in MOS structures depend on the direction of built-in electrical field in MOS structures. Accumulation of the excess negative charges in the case of p-channel transistors is associated with electron trapping on Ge nanocrystals synthesized in the buried dielectric. In the case of n-channel transistor, positive charge related to the Si/SiO2 interface or to the charged oxide is accumulated. The Ge atoms diffused to the SiO2/Si interface can stimulate the formation of the excess positive charge.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

77-82

DOI:

10.4028/www.scientific.net/SSP.108-109.77

Citation:

I. E. Tyschenko et al., "Carrier Accumulation in Silicon-On-Insulator Structures Containing Ge Nanocrystals in the Burried SiO2 Layer", Solid State Phenomena, Vols. 108-109, pp. 77-82, 2005

Online since:

December 2005

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Price:

$35.00

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