Laser Assisted Formation on Nanocrystals in Plasma-Chemical Deposited SiNx Films

Abstract:

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The laser assisted formation of silicon nanocrystals in SiNx films deposited on quartz and silicon substrates is studied. The Raman spectroscopy revealed creation of the Si cluster and crystallite after excimer laser treatments. Photoluminescence signal from the samples was detected at room temperatures. I-V and C-V measurements were carried out to examine carries transfer through dielectrics film as well as recharging of electronics states.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

53-58

DOI:

10.4028/www.scientific.net/SSP.108-109.53

Citation:

S. A. Arzhannikova et al., "Laser Assisted Formation on Nanocrystals in Plasma-Chemical Deposited SiNx Films", Solid State Phenomena, Vols. 108-109, pp. 53-58, 2005

Online since:

December 2005

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Price:

$35.00

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