From Continuous to Quantized Charging Phenomena in Few Nanocrystals MOS Structures
p.25
p.25
Passivation of Ge Nanocrystals in SiO2
p.33
p.33
The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide Matrix
p.39
p.39
Use of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETs
p.45
p.45
Laser Assisted Formation on Nanocrystals in Plasma-Chemical Deposited SiNx Films
p.53
p.53
Stability of Emission Properties of Silicon Nanostructures
p.59
p.59
Blue Photoluminescence from Quantum Size Silicon Nanopowder
p.65
p.65
Evolution of Quantum Electronic Features with the Size of Silicon Nanoparticles Embedded in a SiO2 Layer Obtained by Low Energy Ion Implantation
p.71
p.71
Carrier Accumulation in Silicon-On-Insulator Structures Containing Ge Nanocrystals in the Burried SiO2 Layer
p.77
p.77
Laser Assisted Formation on Nanocrystals in Plasma-Chemical Deposited SiNx Films
Abstract:
The laser assisted formation of silicon nanocrystals in SiNx films deposited on quartz and silicon substrates is studied. The Raman spectroscopy revealed creation of the Si cluster and crystallite after excimer laser treatments. Photoluminescence signal from the samples was detected at room temperatures. I-V and C-V measurements were carried out to examine carries transfer through dielectrics film as well as recharging of electronics states.
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Periodical:
Solid State Phenomena (Volumes 108-109)
Pages:
53-58
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Online since:
December 2005
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© 2005 Trans Tech Publications Ltd. All Rights Reserved
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