Use of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETs

Abstract:

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The aim of this work is to study the physical obstacles introduced by the use of high-k MOSFETs structures and discuss basic problems associated with high-k candidates currently investigated such as low carrier mobility and parasitic interfacial layers and to present other ways to reduce the undesirable secondary effects when one replaces silicon with a high dielectric oxyde (high-k). We will show that use of the nitride allows reducing the effects of the interfacial layers with an acceptable reduction rate of mobility.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

45-52

DOI:

10.4028/www.scientific.net/SSP.108-109.45

Citation:

Y. Amhouche and K. Rais, "Use of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETs", Solid State Phenomena, Vols. 108-109, pp. 45-52, 2005

Online since:

December 2005

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$35.00

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