Use of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETs

Y. Amhouche; K. Rais

doi:10.4028/www.scientific.net/SSP.108-109.45

Paper Titles

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Passivation of Ge Nanocrystals in SiO₂
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The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide Matrix
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Use of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETs
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Laser Assisted Formation on Nanocrystals in Plasma-Chemical Deposited SiN_x Films
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Stability of Emission Properties of Silicon Nanostructures
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Blue Photoluminescence from Quantum Size Silicon Nanopowder
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Evolution of Quantum Electronic Features with the Size of Silicon Nanoparticles Embedded in a SiO₂ Layer Obtained by Low Energy Ion Implantation
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HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Use of the Nitride to Reduce High-K Secondary...

Use of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETs

Abstract:

The aim of this work is to study the physical obstacles introduced by the use of high-k MOSFETs structures and discuss basic problems associated with high-k candidates currently investigated such as low carrier mobility and parasitic interfacial layers and to present other ways to reduce the undesirable secondary effects when one replaces silicon with a high dielectric oxyde (high-k). We will show that use of the nitride allows reducing the effects of the interfacial layers with an acceptable reduction rate of mobility.

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

45-52

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.45

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Online since:

December 2005

Authors:

Y. Amhouche, K. Rais

Keywords:

High-k, Interfacial Layer, Mobility, Nitride, Surface Roughness (SR)

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