Use of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETs
The aim of this work is to study the physical obstacles introduced by the use of high-k MOSFETs structures and discuss basic problems associated with high-k candidates currently investigated such as low carrier mobility and parasitic interfacial layers and to present other ways to reduce the undesirable secondary effects when one replaces silicon with a high dielectric oxyde (high-k). We will show that use of the nitride allows reducing the effects of the interfacial layers with an acceptable reduction rate of mobility.
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
Y. Amhouche and K. Rais, "Use of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETs", Solid State Phenomena, Vols. 108-109, pp. 45-52, 2005