Morphological Transformation of Oxide Particles and Thresholds for Effective Gettering in Silicon
p.97
p.97
Effect of Oxygen Precipitates on the Surface-Precipitation of Nickel on Cz-Silicon Wafers
p.103
p.103
Electrical Properties of Clustered and Precipitated Iron in Silicon
p.109
p.109
Gettering Mechanism of Cu in Silicon Calculated from First Principles
p.115
p.115
Energetics and Kinetics of Defects and Impurities in Silicon from Atomistic Calculations
p.125
p.125
Microscopic Mechanisms of Cobalt Disilicide Nucleation in Silicon
p.133
p.133
The Influence of Nitrogen on Dislocation Locking in Float-Zone Silicon
p.139
p.139
Amorphisation and Recrystallisation of Nanometre Sized Zones in Silicon
p.145
p.145
Impact of Low Temperature Hydrogenation on Recombination Activity of Dislocations in Silicon
p.151
p.151
Energetics and Kinetics of Defects and Impurities in Silicon from Atomistic Calculations
Abstract:
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Periodical:
Solid State Phenomena (Volumes 108-109)
Pages:
125-132
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Online since:
December 2005
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© 2005 Trans Tech Publications Ltd. All Rights Reserved
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