Impact of Low Temperature Hydrogenation on Recombination Activity of Dislocations in Silicon

O.F. Vyvenko; Martin Kittler; Winfried Seifert

doi:10.4028/www.scientific.net/SSP.108-109.151

Paper Titles

Energetics and Kinetics of Defects and Impurities in Silicon from Atomistic Calculations
p.125

Microscopic Mechanisms of Cobalt Disilicide Nucleation in Silicon
p.133

The Influence of Nitrogen on Dislocation Locking in Float-Zone Silicon
p.139

Amorphisation and Recrystallisation of Nanometre Sized Zones in Silicon
p.145

Impact of Low Temperature Hydrogenation on Recombination Activity of Dislocations in Silicon
p.151

FTIR Study of Precipitation of Implanted Nitrogen in CZ-Si Annealed under High Hydrostatic Pressure
p.157

Influence of Magnetic Field on the Unlocking Stress for Dislocation Motion in Cz-Si Depending on Pre-Annealing Time
p.163

Influence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-Si
p.169

Ab Initio Studies of Local Vibrations of Small Self-Interstitials Aggregates in Silicon
p.175

HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Impact of Low Temperature Hydrogenation on...

Impact of Low Temperature Hydrogenation on Recombination Activity of Dislocations in Silicon

Abstract:

Silicon samples doped with gallium and intentionally contaminated with iron have been studied by means of electron beam current (EBIC), capacitance voltage (CV) and deep level transient spectroscopy (DLTS) methods. Reverse bias anneal (RBA) treatments at temperatures of 390-420K were used to move hydrogen and dissolved iron atoms away from the surface. A new procedure was developed to find dislocations lying on desirable depth from the surface and to analyze the depth distribution of their recombination contrast. Iron contaminated dislocations do not noticeably change their recombination activity when kept in an electrical field as high as 104 V/cm at 420K for several hours. This implies a tight binding of iron atoms at dislocations. The binding energy of iron with dislocations seems to be much larger than for Fe-Ga and H-Ga pairs. Low temperature hydrogenation of iron contaminated dislocations does not produce any passivation effect. In opposite, the recombination activity of the dislocations significantly increases after RBA treatment.