Control of Oxygen Precipitation in Silicon by Infrared Laser Irradiation

Abstract:

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We have investigated the effect of infrared laser irradiation on the oxygen precipitation in silicon crystals during the heat-treatments. The laser light of the wave numbers of 1085 cm-1 was adopted, which is close to the wave number of the infrared absorption by oxygen in silicon (Si-O-Si) at high temperature. We have found that for the high-temperature anneals around 1200 °C for 1-2 h, the infrared laser irradiation during the anneals significantly (almost completely) suppresses the oxygen precipitation.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

245-252

DOI:

10.4028/www.scientific.net/SSP.108-109.245

Citation:

H. Yamada-Kaneta and K. Tanahashi, "Control of Oxygen Precipitation in Silicon by Infrared Laser Irradiation", Solid State Phenomena, Vols. 108-109, pp. 245-252, 2005

Online since:

December 2005

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Price:

$35.00

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