Control of Oxygen Precipitation in Silicon by Infrared Laser Irradiation
We have investigated the effect of infrared laser irradiation on the oxygen precipitation in silicon crystals during the heat-treatments. The laser light of the wave numbers of 1085 cm-1 was adopted, which is close to the wave number of the infrared absorption by oxygen in silicon (Si-O-Si) at high temperature. We have found that for the high-temperature anneals around 1200 °C for 1-2 h, the infrared laser irradiation during the anneals significantly (almost completely) suppresses the oxygen precipitation.
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
H. Yamada-Kaneta and K. Tanahashi, "Control of Oxygen Precipitation in Silicon by Infrared Laser Irradiation", Solid State Phenomena, Vols. 108-109, pp. 245-252, 2005