Control of Oxygen Precipitation in Silicon by Infrared Laser Irradiation

Hiroshi Yamada-Kaneta; K. Tanahashi

doi:10.4028/www.scientific.net/SSP.108-109.245

Paper Titles

Metastable VO₂ Complexes in Silicon: Experimental and Theoretical Modeling Studies
p.223

Quantum-Chemical Simulation of Silicon Grain Boundaries Contaminated by Oxygen and Carbon
p.235

Study of Au Diffusion in Nitrogen-Doped FZ Si
p.241

Control of Oxygen Precipitation in Silicon by Infrared Laser Irradiation
p.245

Electronic Properties and Thermal Stability of Defects Induced by MeV Electron/Ion Irradiations in Unstrained Germanium and SiGe Alloys
p.253

Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS Studies
p.261

VO_n (n≥3) Defects in Irradiated and Heat-Treated Silicon
p.267

Electronic Properties and Structure of a Complex Incorporating a Self-Interstitial and two Oxygen Atoms in Silicon
p.273

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Control of Oxygen Precipitation in Silicon by Infrared Laser Irradiation

Abstract:

We have investigated the effect of infrared laser irradiation on the oxygen precipitation in silicon crystals during the heat-treatments. The laser light of the wave numbers of 1085 cm-1 was adopted, which is close to the wave number of the infrared absorption by oxygen in silicon (Si-O-Si) at high temperature. We have found that for the high-temperature anneals around 1200 °C for 1-2 h, the infrared laser irradiation during the anneals significantly (almost completely) suppresses the oxygen precipitation.