Titanium oxynitride (TiOxNy) films were prepared by RF PECVD on Si(100) and glass substrates using nitrogen and argon mixture gas. Titanium iso-propoxide (Ti[OCH(CH3) 2] 4, 97%) was used as precursor with different nitrogen flow rate to control oxygen and nitrogen contents in the films. Changes of chemical states of constituent elements in the deposited films were examined by X-ray photoelectron spectroscopy (XPS) analysis. With increasing nitrogen flow rate the total amount of nitrogen was increased while that of oxygen was decreased. The film growth orientation and N-H peak intensity characteristics were also analyzed by X-ray diffraction (XRD), atomic force microscopy (AFM), and infrared spectroscopy (FT-IR). Through refractive index as well as contact angle analysis, we can suggest that relationship to surface energy and optical property. Moreover, transmission electron microscopy (TEM) was also used to investigate the morphology of TiOxNy thin film and the phase of the TiOxNy thin film different nitrogen flow rate.