Dispersion of Dielectric Permittivity in Thin Ferroelectric Lead Titanate Films

S. Sidorkin; L.P. Nesterenko; I.A. Bocharova; G.L. Smirnov; V.A. Sidorkin; S.V. Ryabtsev; A.L. Smirnov

doi:10.4028/www.scientific.net/SSP.115.233

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HomeSolid State PhenomenaSolid State Phenomena Vol. 115Dispersion of Dielectric Permittivity in Thin...

Dispersion of Dielectric Permittivity in Thin Ferroelectric Lead Titanate Films

Abstract:

Lead titanate thin films were obtained by plasma-enhanced magnetron sputtering. Synthesized films demonstrate high temperature stability, relatively narrow maximum at temperature of phase transition for ε (T ) dependence, great dielectric constant value near the Curie point, saturated hysteresis loops, and relaxation character for dispersion of dielectric permittivity similar to bulk samples.

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Periodical:

Solid State Phenomena (Volume 115)

Pages:

233-238

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.115.233

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Online since:

August 2006

Authors:

S. Sidorkin, L.P. Nesterenko, I.A. Bocharova, G.L. Smirnov, V.A. Sidorkin, S.V. Ryabtsev, A.L. Smirnov

Keywords:

Dielectric Permittivity, Dispersion, Ferroelectric, Lead Titanate, Magnetron Sputtering, Thin Film

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References

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