The Properties of Heavily Al-Doped ZnO Films by Simultaneous rc and dc Magnetron Sputtering

Abstract:

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A radio frequency power (rf) was supplied to ZnO target, and a direct current (dc) power was supplied to Al target for the preparation of heavily Al-doped ZnO (ZnO:Al) films. The advantage of this kind of deposited method is that the Al content could be changed in a wide range. The ZnO:Al films prepared at different dc powers showed different surface morphologies, and corresponded to the different surface roughness. The ZnO:Al films prepared at high dc powers showed the amorphous structures, and resulted in very high resistivity. The resistivity of ZnO:Al film prepared at dc power of 40W was lower (8.52×10-3 -cm). It was mainly due to the relatively higher mobility, which probably resulted from the relatively low surface roughness, and corresponded to the surface morphology in the shape of cobblestone. In addition, the ZnO:Al films prepared at different dc powers showed different optical properties.

Info:

Periodical:

Solid State Phenomena (Volume 118)

Edited by:

Jang Hyun Sung, Chan Gyu Lee, Yong Zoo You, Young Kook Lee and Jae Young Kim

Pages:

305-310

DOI:

10.4028/www.scientific.net/SSP.118.305

Citation:

S. S. Lin and J. L. Huang, "The Properties of Heavily Al-Doped ZnO Films by Simultaneous rc and dc Magnetron Sputtering", Solid State Phenomena, Vol. 118, pp. 305-310, 2006

Online since:

December 2006

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Price:

$35.00

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