Authors: Hai Yi Li, Yan Lai Wang, Shi Liang Ban, Yi Min Wang
Abstract: CdS thin films deposited on glass substrate are prepared by chemical bath deposition using the reaction between CdSO4 and CS (NH2)2. The composition, surface morphology and structural properties of as-deposited and annealed CdS thin films were studied using scanning electron microscopy (SEM), X-ray diffractometry (XRD), energy dispersive spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) techniques. The results indicate that the dense, homogeneous polycrystalline CdS thin films with smooth surface can be obtained by chemical bath deposition. The CdS thin films have cubic structure and the ratio of S and Cd is 1:1 in CdS thin films. Optical properties of CdS films were measured with ultraviolet-visible spectrophotometer. The optical band gap energy (Eg) of film sample was found to be 2.31 eV.
1406
Authors: Ping Luan, Jian Sheng Xie, Jin Hua Li
Abstract: Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.
822
Authors: Jian Sheng Xie, Ping Luan, Jin Hua Li
Abstract: Using magnetron sputtering technology, the CuInSi nanocomposite thin films were prepared by multilayer synthesized method. The structure of CuInSi nanocomposite films was detected by X-ray diffraction (XRD), the peak of main crystal phase is at 2θ=42.180°; the morphology of the film surface was studied by SEM. The SEM images show that the crystalline of the film prepared by multilayer synthesized method was granulated, differed from the needle shape which was the morphology of the CuInSi film prepared by magnetron co-sputtering.
2770
Authors: Jian Sheng Xie, Jin Hua Li, Ping Luan
Abstract: Thin CuInSi films have been prepared by magnetron co-sputtering, and followed by annealing in N2 atmosphere at different temperatures. The structures of CuInSi films were detected by X-ray diffraction(XRD); X-ray diffraction studies of the annealed films indicate the presence of CuInSi, In2O3 and other peaks. The morphology of the film surface was studied by SEM. The band gap has been estimated from the optical absorption studies and found to be about 1.40 eV, but changes with purity of CuInSi. CuInSi thin film is a potential absorber layer material applied in solar cells and photoelectric automatic control.
302
Authors: Xiao Hua Sun, Shuang Hou, Zhi Meng Luo, Cai Hua Huang, Zong Zhi Hu
Abstract: Bismuth zinc niobate titanium (Bi1.5Zn0.5 Nb0.5Ti1.5O7) (BZNT) thin films were deposited on PtTiSiO2Si substrates by radio frequency (rf) magnetron sputtering. The microstructure, surface morphology, stress, dielectric and tunable properties of thin films were investigated as a function of initial annealing temperature. It’s found that high initial annealing temperature increases the grain size, dielectric constant and tunability of BZNT films simultaneously and decreases the tensile stress in films. The BZNT thin film annealed from 500 °C to 700 °C shows the highest FOM value of 45.67 with the smallest dielectric loss and upper tunability.
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