Bi-Ge-Sb-Te Films for Reversible Phase-Change Optical Recording

Abstract:

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The Bi-Ge-Sb-Te phase-change recording films were prepared by DC magnetron sputtering of Bi5Ge9Sb68Te18 and Bi5Ge3Sb74Te18 targets, individually. The surface roughness of Bi5Ge9Sb68Te18 film was relatively low. At the recording speed of 27.92 m/s, the jitter value of Bi5Ge9Sb68Te18 disk was 21.33%, but Bi5Ge3Sb74Te18 disk could not be recorded. After the aging test, the reflectivity change (Rbef.−Raft.) of Bi5Ge9Sb68Te18 film was obviously less. It could be found that the Bi5Ge9Sb68Te18 film was suitable for high-speed recording and showed the better archival life stability. As the results, the recording performance and archival life stability of phase-change optical disks were dominated by the composition of recording film.

Info:

Periodical:

Solid State Phenomena (Volume 118)

Edited by:

Jang Hyun Sung, Chan Gyu Lee, Yong Zoo You, Young Kook Lee and Jae Young Kim

Pages:

293-298

DOI:

10.4028/www.scientific.net/SSP.118.293

Citation:

S. S. Lin "Bi-Ge-Sb-Te Films for Reversible Phase-Change Optical Recording", Solid State Phenomena, Vol. 118, pp. 293-298, 2006

Online since:

December 2006

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Price:

$35.00

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