Bi-Ge-Sb-Te Films for Reversible Phase-Change Optical Recording
The Bi-Ge-Sb-Te phase-change recording films were prepared by DC magnetron sputtering of Bi5Ge9Sb68Te18 and Bi5Ge3Sb74Te18 targets, individually. The surface roughness of Bi5Ge9Sb68Te18 film was relatively low. At the recording speed of 27.92 m/s, the jitter value of Bi5Ge9Sb68Te18 disk was 21.33%, but Bi5Ge3Sb74Te18 disk could not be recorded. After the aging test, the reflectivity change (Rbef.−Raft.) of Bi5Ge9Sb68Te18 film was obviously less. It could be found that the Bi5Ge9Sb68Te18 film was suitable for high-speed recording and showed the better archival life stability. As the results, the recording performance and archival life stability of phase-change optical disks were dominated by the composition of recording film.
Jang Hyun Sung, Chan Gyu Lee, Yong Zoo You, Young Kook Lee and Jae Young Kim
S. S. Lin "Bi-Ge-Sb-Te Films for Reversible Phase-Change Optical Recording", Solid State Phenomena, Vol. 118, pp. 293-298, 2006