[1]
L. Guo, Y. L. Ji, H. B. Xu, P. Simon, and Z. Y. Wu: J. A m. Chem. Soc. 124 (2002), p.14864.
Google Scholar
[2]
D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen, and T. Goto: Appl. Phys. Lett. 70 (1997) , p.2230.
Google Scholar
[3]
Michael H. Huang, Samuel Mao, Henning Feick, Haoquan Yan, Yiying Wu, Hannes Kind, Eicke Weber, Richard Russo, et al., Science 292 (2001), p.1897.
Google Scholar
[4]
Chang Yong-Qin, Yu Da-Peng, Li Guo-Hua, Fang Zai-Li, Zhang Ye, Chen Yao-Feng, Yang Fu-Hua, Chin. Phys. Lett. 21 (2004), p.2301.
DOI: 10.1088/0256-307x/21/11/063
Google Scholar
[5]
Xudong Wang, Christopher J. Summers et al., Nano Lett. 4 (2004), p.423.
Google Scholar
[6]
Y.G. Wang, Clement Yuen, S.P. Lau , S.F. Yu, B.K. Tay, Chem. Phys. Lett. 377 (2003), p.329.
Google Scholar
[7]
Yong-ning He, Chang-Chun Zhu, Jing-wen Zhang, Microelectronics Journal 35 (2004), p.389.
Google Scholar
[8]
J.M. Hvam, Solid State Commun. 12 (1973), p.95.
Google Scholar
[9]
P.R. Newbury, K. Sbabzad, D.A. Cammack, Appl. Phys. Lett. 58 (1991), p.1065.
Google Scholar
[10]
X.H. Wang, D.X. Zhao, Y.C. Liu, et al., J. of Crystal Growth 263 (2004), p.316.
Google Scholar
[11]
A. Polimeni, M. Capizzi, M. Geddo, et al., Appl. Phys. Lett. 77 (2000), p.2870.
Google Scholar
[12]
D. W. Hamby, D. A. Lucca, and M. J. Klopfstein, G. Cantwell, J. Appl. Phys. 93 (2003), p.3214.
Google Scholar
[13]
Yefan Chen, Darren Bagnall, Takafumi Yao, Materials Science and Engineering B75 (2000), p.190.
Google Scholar