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HomeSolid State PhenomenaSolid State Phenomena Vols. 121-123Field Emission from ZnO by Morphological and...

Field Emission from ZnO by Morphological and Electronic Design

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Abstract:

In this paper, field emission from ZnO was studied by morphological and electronic design. By fabricating ZnO into nanopin structure with sharp tip, we can obtain low threshold and high emission current density. By doping ZnO with gallium, we can lift up the Fermi level and increase the conductivity to enhance the field emission. The fabrication of nanostructures and analysis of field emission will be discussed.

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Periodical:

Solid State Phenomena (Volumes 121-123)

Pages:

813-816

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.121-123.813

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Online since:

March 2007

Authors:

C.X. Xu, X.W. Sun, Z.L. Dong, G.P. Zhu, Y.P. Cui

Keywords:

Field Emission, Nanostructural ZnO, n-Type Doping

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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[1] A. Buldum, and J. P. Lu, Phys. Rev. Lett. 91(2003) 236801-1.

[2] W. A. de Heer, A. Chatelain and D. Uqarte, Science, 270(1995) 1179.

[3] X. W. Sun and H. S. Kwok, J. Appl. Phys. 86(1999) 408.

[4] M. H. Huang, Y. Wu, H. Feick, N. Tran, E. Weber, and P. Yang, Adv. Mater. 13(2001) 113.

[5] C. X. Xu, X. W. Sun, Z. L. Dong and M. B. Yu, Appl. Phys. Lett. 85(2004) 3878.

[6] C. X. Xu, X. W. Sun, B. J. Chen, and Z. L. Dong, Appl. Phys. Lett. 86(2005)011118.

[7] W. I. Park, D. H. Kim, S. W. Jung, and G. C. Yi, Appl. Phys. Lett. 80(2002) 4232.

[8] L. Vayssieres, K. Keis, S. -E. Lindquist, and A. Hagfeldt, J. Phy. Chem. B. 105(2001) 3350.

[9] Y. Li, G. W. Meng, L.D. Zhang, and F. Phillipp, Appl. Phys. Lett., 76(2000) (2011).

[10] L. Dong, J. Jiao, D. W. Tuggle, J. M. Petty, S. A. Elliff, and M. Coulter, Appl. Phys. Lett., 82(2003) 1096.

DOI: 10.1063/1.1554477

[11] C. J. Lee, T. J. Lee, S. C. Lyu, Y. Zhang, H. Ruh, H. J. and Lee, Appl. Phys. Lett., 81(2002) 3648.

[12] Y. W. Zhu, H. Z. Zhang, X. C. Sun, S. Q. Feng, J. Xu, Q. Zhao, B. Xiang, R. M. Wang, and D. P. Yu, Appl. Phys. Lett., 83 (2003) 144.

[13] Q. Wan, K. Yu, T. H. Wang, and C. L. Lin, Appl. Phys. Lett., 83(2003) 2253.

[14] S. H. Jo, J. Y. Lao, Z. F. Ren, R. A. Farrer, T. Baldacchini, and J. T. Fourkas, Appl. Phys. Lett., 83(2003)4821.

DOI: 10.1063/1.1631735

[15] C. X. Xu, and X. W. Sun, Appl. Phys. Lett., 83(2003) 3806.

[16] C. X. Xu, and X. W. Sun, Int. J. Nanotech. 1(2004) 452.

[17] C. X. Xu, X. W. Sun, and B. J. Chen, Appl. Phys. Lett. 84(2004) 1540.

[18] G. N. Fursey, and D. V. Glazanov, J. Vac. Sci. Tech. B, 16 (1998) 910.

[19] S. M. Sze, Physics of Semiconductor Devices, 2nd Edition, (1981) John Wiley & Sons, Singapore. p.17.

[20] W. Zhu, Vacuum Microelectronics, (2001) John Wiley and Sons Inc. p.247.