Nanomeasure of Esaki Negative Resistance on p-Type GaAs(110) Surfaces
At the (110) cleaved surfaces of p-type GaAs with degenerate doping level, the negative differential resistance (NDR) inside of the band gap was observed in scanning tunneling spectra (STS) measurement. The origin of the NDR was found to be the voltage dependence of the transmission coefficient through the double tunneling barrier, a phenomenon similar to that reported by Esaki and Stiles in planar metal-insulator-semiconductor tunnel junctions.
Chunli BAI, Sishen XIE, Xing ZHU
S. Perraud et al., "Nanomeasure of Esaki Negative Resistance on p-Type GaAs(110) Surfaces", Solid State Phenomena, Vols. 121-123, pp. 835-838, 2007