Nanomeasure of Esaki Negative Resistance on p-Type GaAs(110) Surfaces

Abstract:

Article Preview

At the (110) cleaved surfaces of p-type GaAs with degenerate doping level, the negative differential resistance (NDR) inside of the band gap was observed in scanning tunneling spectra (STS) measurement. The origin of the NDR was found to be the voltage dependence of the transmission coefficient through the double tunneling barrier, a phenomenon similar to that reported by Esaki and Stiles in planar metal-insulator-semiconductor tunnel junctions.

Info:

Periodical:

Solid State Phenomena (Volumes 121-123)

Edited by:

Chunli BAI, Sishen XIE, Xing ZHU

Pages:

835-838

DOI:

10.4028/www.scientific.net/SSP.121-123.835

Citation:

S. Perraud et al., "Nanomeasure of Esaki Negative Resistance on p-Type GaAs(110) Surfaces", Solid State Phenomena, Vols. 121-123, pp. 835-838, 2007

Online since:

March 2007

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.