Nanomeasure of Esaki Negative Resistance on p-Type GaAs(110) Surfaces

S. Perraud; C. David; Z.Z. Wang

doi:10.4028/www.scientific.net/SSP.121-123.835

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HomeSolid State PhenomenaSolid State Phenomena Vols. 121-123Nanomeasure of Esaki Negative Resistance on p-Type...

Nanomeasure of Esaki Negative Resistance on p-Type GaAs(110) Surfaces

Abstract:

At the (110) cleaved surfaces of p-type GaAs with degenerate doping level, the negative differential resistance (NDR) inside of the band gap was observed in scanning tunneling spectra (STS) measurement. The origin of the NDR was found to be the voltage dependence of the transmission coefficient through the double tunneling barrier, a phenomenon similar to that reported by Esaki and Stiles in planar metal-insulator-semiconductor tunnel junctions.

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Periodical:

Solid State Phenomena (Volumes 121-123)

Pages:

835-838

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.121-123.835

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Online since:

March 2007

Authors:

S. Perraud, C. David, Z.Z. Wang

Keywords:

Band Bending, Density of States (DOS), Esaki Negative Resistance , STS

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