The Effect of ZnO:Al Sputtering Condition on a-Si:H / Si Wafer Heterojunction Solar Cells

Abstract:

A-Si:H/Si wafer heterojunction solar cells with different ZnO:Al sputtering conditions were fabricated and the effects of sputtering conditions on device performance were evaluated. Various sputter condition(substrate temperature RT~200’C, working pressure 0.5mTorr~15mTorr, thickness 60~100nm) were tested and optimized as 130’C, 0.5mTorr, 80nm by measuring reflectance and sheet resistance of ZnO:Al layer on corning glass. However, when optimal ZnO:Al condition was applied to solar cells, series resistance was high which led to device efficiency ~10%. Dark I-V curves of with and w/o ZnO layer showed large difference, which means there is a kind of barrier to current flow between ZnO:Al and a-Si:H layer. Modified condition with double layer scheme was applied and lower series resistance and device efficiency above 12% could be reached. The improvement may be due to either suppression of Si oxide formation or less defect formation by impinging atoms.

• Periodical: Solid State Phenomena (Volumes 124-126)
• Pages: 1015-1018
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.124-126.1015
• Online since: June 2007
• Authors: Sang Kyun Kim, Jung Chul Lee, Viresh Dutta, Sung Ju Park, Kyung Hoon Yoon
• Keywords: Heterojunction, Silicon Solar Cell, Zinc Oxide (ZnO)

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DOI: 10.1016/s0040-6090(01)01569-3

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