The Effect of ZnO:Al Sputtering Condition on a-Si:H / Si Wafer Heterojunction Solar Cells

Abstract:

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A-Si:H/Si wafer heterojunction solar cells with different ZnO:Al sputtering conditions were fabricated and the effects of sputtering conditions on device performance were evaluated. Various sputter condition(substrate temperature RT~200’C, working pressure 0.5mTorr~15mTorr, thickness 60~100nm) were tested and optimized as 130’C, 0.5mTorr, 80nm by measuring reflectance and sheet resistance of ZnO:Al layer on corning glass. However, when optimal ZnO:Al condition was applied to solar cells, series resistance was high which led to device efficiency ~10%. Dark I-V curves of with and w/o ZnO layer showed large difference, which means there is a kind of barrier to current flow between ZnO:Al and a-Si:H layer. Modified condition with double layer scheme was applied and lower series resistance and device efficiency above 12% could be reached. The improvement may be due to either suppression of Si oxide formation or less defect formation by impinging atoms.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

1015-1018

DOI:

10.4028/www.scientific.net/SSP.124-126.1015

Citation:

S. K. Kim et al., "The Effect of ZnO:Al Sputtering Condition on a-Si:H / Si Wafer Heterojunction Solar Cells", Solid State Phenomena, Vols. 124-126, pp. 1015-1018, 2007

Online since:

June 2007

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$35.00

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