Atomic layer deposition (ALD) has been used in advanced applications where thin layers of materials with precise thickness down to the nanometer scale are needed. Using anodic oxidation, we prepared the porous alumina. Anodic oxidation was carried out in 5C 0.3M oxalic acid with anodizing voltages (~ 40 V) and two step anodization method. SEM shows that, these porous anodic oxides are well aligned and organized into high-density uniform arrays. Afterward, titanium dioxide thin films were coated by ALD on the porous anodic aluminum oxide. ALD films were influenced by the deposited interface morphology between Al2O3 and TiO2 and narrow channel of ~ 10 nm was obtained by controlling ALD cycle.