The Effect of DC Bias Voltage on the Structural and Optical Properties of Hydrogenated Nanocrystalline Si Thin Films

Abstract:

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Amorphous and nanocrystalline Si films were prepared by plasma enhanced chemical vapor deposition (PECVD). The films were deposited with a RF power of 100 W, while substrates were under DC biases varying from 0 to -600 V. The size as well as the concentration of Si nanocrystallites increased with raising the DC bias; the PL emission wavelength was shifted from 400 to 750 nm. A model for the nanostructural variation in the nc-Si:H films was suggested to describe the change in the size and concentration of the nanocrystallites as well as the amorphous matrix depending on the DC bias conditions.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

1261-1264

DOI:

10.4028/www.scientific.net/SSP.124-126.1261

Citation:

J. H. Shim and N. H. Cho, "The Effect of DC Bias Voltage on the Structural and Optical Properties of Hydrogenated Nanocrystalline Si Thin Films", Solid State Phenomena, Vols. 124-126, pp. 1261-1264, 2007

Online since:

June 2007

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