Effect of Source Supply Methods on Low-Temperature Preparation of Lead Zirconate Titanate Thin Films Using SrTiO3 Seed Layers by Metallorganic Chemical Vapor Deposition

Ji Won Moon; Shogo Tazawa; Naoki Wakiya; Takanori Kiguchi; Youhei Ishida; Nobuyasu Mizutani; Kazuo Shinozaki

doi:10.4028/www.scientific.net/SSP.124-126.153

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HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Effect of Source Supply Methods on Low-Temperature...

Effect of Source Supply Methods on Low-Temperature Preparation of Lead Zirconate Titanate Thin Films Using SrTiO₃ Seed Layers by Metallorganic Chemical Vapor Deposition

Abstract:

Pb(Zr, Ti)O3 thin films were successfully prepared on (111)Pt/IrO2/SiO2/(100)Si substrates using SrTiO3 seeds at 290 oC by RF inductive heating type and 350 oC by resistive heating type metalorganic chemical vapor deposition method (MOCVD), respectively. The SrTiO3 was chosen as seed layers and prepared by pulsed laser deposition method. The crystal structures and orientations of SrTiO3 seeds were changed by deposition temperature. In the case of preparation with RF inductive heating MOCVD, the remanent polarization (2Pr) and coercive field (2Ec) were 42 μC/cm2 and 256 kV/cm, respectively.

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Solid State Phenomena (Volumes 124-126)

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153-156

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https://doi.org/10.4028/www.scientific.net/SSP.124-126.153

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June 2007

Authors:

Ji Won Moon, Shogo Tazawa, Naoki Wakiya, Takanori Kiguchi, Youhei Ishida, Nobuyasu Mizutani, Kazuo Shinozaki

Keywords:

Low-Temperature Preparation, Pb(Zr,Ti)O₃, Seed Layer, SrTiO₃, Thin Film

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